ACCUMULATION OF DEFECTS IN SILICON AT SUPERHIGH DOSES OF ELECTRON-IRRADIATION

被引：8

作者：

AKHMETOV, VD

BOLOTOV, VV

DVURECHENSKY, AV

KASHNIKOV, BP

SMIRNOV, LS

TISHKOVSKY, EG

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 53卷 / 1-2期

关键词：

Compendex;

D O I：

10.1080/00337578008207093

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：33 / 39

页数：7

共 16 条

[1]

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[2]

BOLOTOV VV, 1977, RAD EFFECTS SEMICOND, P472

[3]

BRELOT A, 1972, ETUDE SILICIUM INTER, P23

[4]

Budker G.I., 1976, ATOMNAJA JENERGIJA, V40, P216

[5] THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J].

DAWBER, PG ;

ELLIOTT, RJ .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521) :453-&

[6]

Gerasimenko N. N., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P1700

[7]

JUKOVSKY PV, 1976, FIZ TEKH POLUPROV, V10, P2223

[8]

KHOLODAR GA, 1976, FIZ TEKH POLUPROV, V10, P1712

[9]

KOMALEEVA FN, 1976, FIZ TEKH POLUPROV, V10, P320

[10] EPR STUDIES OF DEFECTS IN ELECTRON-IRRADIATED SILICON - TRIPLET-STATE OF VACANCY-OXYGEN COMPLEXES [J].

LEE, YH ;

CORBETT, JW .

PHYSICAL REVIEW B, 1976, 13 (06) :2653-2666

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