EPR STUDIES OF DEFECTS IN ELECTRON-IRRADIATED SILICON - TRIPLET-STATE OF VACANCY-OXYGEN COMPLEXES

被引：243

作者：

LEE, YH ^{[1
]}

CORBETT, JW ^{[1
]}

机构：

[1] SUNY ALBANY, DEPT PHYS, ALBANY, NY 12222 USA

来源：

关键词：

D O I：

10.1103/PhysRevB.13.2653

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2653 / 2666

页数：14

共 46 条

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[9] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON
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[10] ELECTRON PARAMAGNETIC RESONANCE OF NEUTRAL (S=1) ONE-VACANCY-OXYGEN CENTER IN IRRADIATED SILICON
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