THE EFFECT OF CARBON AND BORON ON THE ACCUMULATION OF VACANCY-OXYGEN COMPLEXES IN SILICON

被引：4

作者：

AKHMETOV, VD

BOLOTOV, VV

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 52卷 / 3-4期

关键词：

D O I：

10.1080/00337578008210027

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：149 / 152

页数：4

共 12 条

[1] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J].

BEAN, AR ;

NEWMAN, RC ;

SMITH, RS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) :739-&

[2]

BOLOTOV VV, 1976, FIZ TEKH POLUPROV, V10, P1187

[3]

BOLOTOV VV, 1977, RAD EFFECTS SEMICOND, P472

[4]

BOLOTOV VV, 1975, FIZ TEKH POLUPROV, V9, P186

[5]

BRELOT A, 1972, THESIS PARIS 7, pCH4

[6] INTERSTITIAL DEFECTS INVOLVING CARBON IN IRRADIATED SILICON [J].

BROZEL, MR ;

NEWMAN, RC ;

TOTTERDELL, DHJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (02) :243-248

[7]

KHOLODAR GA, 1976, FIZ TEKH POLUPROV, V10, P1712

[8] INTERSTITIAL DEFECTS INVOLVING BORON IN IRRADIATED SILICON [J].

LAITHWAITE, K ;

NEWMAN, RC ;

TOTTERDELL, DHJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (02) :236-242

[9] CARBON INTERSTITIAL IN ELECTRON-IRRADIATED SILICON [J].

LEE, YH ;

CHENG, LJ ;

GERSON, JD ;

MOONEY, PM ;

CORBETT, JW .

SOLID STATE COMMUNICATIONS, 1977, 21 (01) :109-111

[10]

NEWMAN RC, 1973, INFRARED STUDIES CRY, P12

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