OBSERVATION OF AN ELECTRONIC BOUND-STATE ABOVE A POTENTIAL WELL

SHORTLY after the birth of quantum mechanics, von Neumann and Wigner made the remarkable proposal1 that certain spatially oscillating attractive potentials could support bound states at energies above the potential barriers (that is, spatially confined states within the continuum) by means of diffractive interference. Because of their unusual geometry, such potentials were regarded as mathematical curiosities2,3, although more recently it has been suggested that they might be found in certain atomic and molecular systems4,5. Following the observation of discrete electronic states in ultra-thin semiconductor layered structures6,7 (for example, in quantum wells), Stillinger8 and Herrick9 proposed that super-lattices might be used to construct potentials supporting these 'positive energy' bound states. Here we report direct evidence of such states in semiconductor heterostructures grown by molecular-beam epitaxy10. Infrared absorption measurements reveal a narrow, isolated transition from a bound state within a quantum well to a bound state at an energy greater than the barrier height; this state is spatially localized by Bragg reflections.