BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES

被引：341

作者：

CAPASSO, F

机构：

来源：

SCIENCE | 1987年 / 235卷 / 4785期

关键词：

D O I：

10.1126/science.235.4785.172

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

收藏

页码：172 / 176

页数：5

相关论文

共 51 条

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[2] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS
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[3] CONVERSION OF POISSON PHOTONS INTO SUB-POISSON PHOTONS BY THE ACTION OF ELECTRON FEEDBACK
CAPASSO, F
TEICH, MC
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (12) : 1417 - 1420
[4] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE
CAPASSO, F
KIEHL, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368
[5] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO
CAPASSO, F
TSANG, WT
HUTCHINSON, AL
WILLIAMS, GF
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40
[6] NEW QUANTUM PHOTOCONDUCTIVITY AND LARGE PHOTOCURRENT GAIN BY EFFECTIVE-MASS FILTERING IN A FORWARD-BIASED SUPERLATTICE P-N-JUNCTION
CAPASSO, F
MOHAMMED, K
CHO, AY
HULL, R
HUTCHINSON, AL
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (10) : 1152 - 1155
[7] THE CHANNELING AVALANCHE PHOTO-DIODE - A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N-JUNCTION DETECTOR
CAPASSO, F
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1388 - 1395
[8] NEW TRANSIENT ELECTRICAL-POLARIZATION PHENOMENON IN SAWTOOTH SUPER-LATTICES
CAPASSO, F
LURYI, S
TSANG, WT
BETHEA, CG
LEVINE, BF
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (25) : 2318 - 2321
[9] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO
CAPASSO, F
TSANG, WT
WILLIAMS, GF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 381 - 390
[10] NEW AVALANCHE MULTIPLICATION PHENOMENON IN QUANTAM WILL SUPERLATTICES - EVIDENCE OF IMPACT IONIZATION ACROSS THE BAND-EDGE DISCONTINUITY
CAPASSO, F
ALLAM, J
CHO, AY
MOHAMMED, K
MALIK, RJ
HUTCHINSON, AL
SIVCO, D
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1294 - 1296

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