BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES

被引:342
作者
CAPASSO, F
机构
关键词
D O I
10.1126/science.235.4785.172
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:172 / 176
页数:5
相关论文
共 51 条
  • [41] HETEROJUNCTION BAND DISCONTINUITY CONTROL BY ULTRATHIN INTRALAYERS
    NILES, DW
    MARGARITONDO, G
    PERFETTI, P
    QUARESIMA, C
    CAPOZI, M
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1092 - 1094
  • [42] ELECTRONIC-STRUCTURE OF GAASXP1-X/GAP STRAINED-LAYER SUPER-LATTICES WITH X-LESS-THAN-0.5
    OSBOURN, GC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 469 - 472
  • [43] MOLECULAR-BEAM EPITAXY
    PANISH, MB
    [J]. SCIENCE, 1980, 208 (4446) : 916 - 922
  • [44] DIPOLE-INDUCED CHANGES OF THE BAND DISCONTINUITIES AT THE SIO2-SI INTERFACE
    PERFETTI, P
    QUARESIMA, C
    COLUZZA, C
    FORTUNATO, C
    MARGARITONDO, G
    [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (16) : 2065 - 2068
  • [45] Rose A, 1963, CONCEPTS PHOTOCONDUC
  • [46] Shockley W., 1951, US Patent, Patent No. 2569347
  • [47] QUANTUM WELL OSCILLATORS
    SOLLNER, TCLG
    TANNENWALD, PE
    PECK, DD
    GOODHUE, WD
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (12) : 1319 - 1321
  • [48] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE
    STORMER, HL
    DINGLE, R
    GOSSARD, AC
    WIEGMANN, W
    STURGE, MD
    [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (10) : 705 - 709
  • [49] SULLIVAN GJ, 1986, 44TH ANN DEV RES C A
  • [50] III-V COMPOUNDS AND ALLOYS - AN UPDATE
    WOODALL, JM
    [J]. SCIENCE, 1980, 208 (4446) : 908 - 915