HETEROJUNCTION BAND DISCONTINUITY CONTROL BY ULTRATHIN INTRALAYERS

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[2] ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (10) : 667 - 670

[3] BONDING AND DIFFUSION AT AL AND AU INTERFACES WITH CDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 476 - 480

[4] NEW MULTILAYER AND GRADED GAP OPTOELECTRONIC AND HIGH-SPEED DEVICES BY BAND-GAP ENGINEERING [J]. SURFACE SCIENCE, 1984, 142 (1-3) : 513 - 528

[5] HETEROJUNCTION BAND DISCONTINUITY GROWTH SEQUENCE VARIATION AT COMPOUND SEMICONDUCTOR-GERMANIUM (110) INTERFACES - POSSIBLE ROLE OF ANTIPHASE DISORDER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1295 - 1299

[6] IS THE BAND OFFSET A BULK SEMICONDUCTOR PROPERTY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1239 - 1240

[7] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1944 - 1956

[8] A POSITIVE TEST OF THE LCAO THEORY OF HETEROJUNCTIONS - MICROSCOPIC MEASUREMENTS OF BAND DISCONTINUITIES AT CDS-GE AND INP-GE INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 662 - 664

[9] CORE-LEVEL PHOTOEMISSION-STUDY OF MBE-GROWN GAAS(111) AND (100) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 608 - 612

[10] KROEMER H, 1983, 1983 P NATO ADV STUD

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326

[2] ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (10) : 667 - 670

[3] BONDING AND DIFFUSION AT AL AND AU INTERFACES WITH CDS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 476 - 480

[4] NEW MULTILAYER AND GRADED GAP OPTOELECTRONIC AND HIGH-SPEED DEVICES BY BAND-GAP ENGINEERING [J]. SURFACE SCIENCE, 1984, 142 (1-3) : 513 - 528

[5] HETEROJUNCTION BAND DISCONTINUITY GROWTH SEQUENCE VARIATION AT COMPOUND SEMICONDUCTOR-GERMANIUM (110) INTERFACES - POSSIBLE ROLE OF ANTIPHASE DISORDER [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1295 - 1299

[6] IS THE BAND OFFSET A BULK SEMICONDUCTOR PROPERTY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1239 - 1240

[7] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1944 - 1956

[8] A POSITIVE TEST OF THE LCAO THEORY OF HETEROJUNCTIONS - MICROSCOPIC MEASUREMENTS OF BAND DISCONTINUITIES AT CDS-GE AND INP-GE INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 662 - 664

[9] CORE-LEVEL PHOTOEMISSION-STUDY OF MBE-GROWN GAAS(111) AND (100) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 608 - 612

[10] KROEMER H, 1983, 1983 P NATO ADV STUD