NEW MULTILAYER AND GRADED GAP OPTOELECTRONIC AND HIGH-SPEED DEVICES BY BAND-GAP ENGINEERING

被引：46

作者：

CAPASSO, F

机构：

来源：

SURFACE SCIENCE | 1984年 / 142卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(84)90359-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：513 / 528

页数：16

相关论文

共 21 条

[1] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO
CAPASSO, F
TSANG, WT
HUTCHINSON, AL
WILLIAMS, GF
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40
[2] THE CHANNELING AVALANCHE PHOTO-DIODE - A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N-JUNCTION DETECTOR
CAPASSO, F
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1388 - 1395
[3] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO
CAPASSO, F
TSANG, WT
WILLIAMS, GF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 381 - 390
[4] NEW GRADED BAND-GAP PICOSECOND PHOTO-TRANSISTOR
CAPASSO, F
TSANG, WT
BETHEA, CG
HUTCHINSON, AL
LEVINE, BF
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 93 - 95
[5] AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO - TOWARDS A SOLID-STATE PHOTOMULTIPLIER
CAPASSO, F
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (01) : 424 - 428
[6] INTERDIGITATED PN JUNCTION DEVICE WITH NOVEL CAPACITANCE VOLTAGE CHARACTERISTIC, ULTRALOW CAPACITANCE AND LOW PUNCH-THROUGH VOLTAGE
CAPASSO, F
LOGAN, RA
TSANG, WT
[J]. ELECTRONICS LETTERS, 1982, 18 (18) : 760 - 761
[7] NEW ULTRA-LOW-NOISE AVALANCHE PHOTO-DIODE WITH SEPARATED ELECTRON AND HOLE AVALANCHE REGIONS
CAPASSO, F
[J]. ELECTRONICS LETTERS, 1982, 18 (01) : 12 - 13
[8] CHANNELING PHOTO-DIODE - A NEW VERSATILE INTERDIGITATED P-N-JUNCTION PHOTODETECTOR
CAPASSO, F
LOGAN, RA
TSANG, WT
HAYES, JR
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 944 - 946
[9] CAPASSO F, UNPUB
[10] CAPASSO F, 1982, 1982 IEEE SPEC C LIG, P166