IS THE BAND OFFSET A BULK SEMICONDUCTOR PROPERTY

被引：12

作者：

KATNANI, AD

BAUER, RS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1239 / 1240

页数：2

共 8 条

[1]

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[2] MICROSCOPIC STUDY OF SEMICONDUCTOR HETEROJUNCTIONS - PHOTOEMISSION MEASUREMENT OF THE VALANCE-BAND DISCONTINUITY AND OF THE POTENTIAL BARRIERS [J].

KATNANI, AD ;

MARGARITONDO, G .

PHYSICAL REVIEW B, 1983, 28 (04) :1944-1956

[3] FERMI LEVEL POSITION AND VALENCE BAND DISCONTINUITY AT GAAS/GE INTERFACES [J].

KATNANI, AD ;

CHIARADIA, P ;

SANG, HW ;

BAUER, RS .

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[4] MICROSCOPIC EFFECTS AT GAAS/GE(100) MOLECULAR-BEAM-EPITAXY INTERFACES - SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY [J].

KATNANI, AD ;

CHIARADIA, P ;

SANG, HW ;

ZURCHER, P ;

BAUER, RS .

PHYSICAL REVIEW B, 1985, 31 (04) :2146-2156

[5]

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[6]

KATNANI AD, UNPUB PHYS REV B

[7] RECENT MODELS OF SCHOTTKY-BARRIER FORMATION [J].

TERSOFF, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1157-1161

[8] DIPOLES, DEFECTS AND INTERFACES [J].

ZUR, A ;

MCGILL, TC ;

SMITH, DL .

SURFACE SCIENCE, 1983, 132 (1-3) :456-464

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