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DIPOLES, DEFECTS AND INTERFACES

被引：18
作者：
ZUR, A
MCGILL, TC
SMITH, DL
机构：
来源：
SURFACE SCIENCE | 1983年 / 132卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(83)90552-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：456 / 464
页数：9
相关论文
共 7 条
[1]   CHEMISORPTION-INDUCED DEFECTS AT INTERFACES ON COMPOUND SEMICONDUCTORS [J].
MONCH, W .
SURFACE SCIENCE, 1983, 132 (1-3) :92-121
[2]   CHEMISORPTION-INDUCED DEFECTS ON GAAS(110) SURFACES [J].
MONCH, W ;
GANT, H .
PHYSICAL REVIEW LETTERS, 1982, 48 (07) :512-515
[3]   SURFACE DONORS AND ACCEPTORS ON GAAS AND INP EXPOSED TO OXYGEN [J].
NEDOLUHA, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :429-433
[4]   UNIFIED DEFECT MODEL AND BEYOND [J].
SPICER, WE ;
LINDAU, I ;
SKEATH, P ;
SU, CY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1019-1027
[5]   SURFACE FERMI LEVEL OF III-V COMPOUND SEMICONDUCTOR-DIELECTRIC INTERFACES [J].
WIEDER, HH .
SURFACE SCIENCE, 1983, 132 (1-3) :390-405
[6]   PROBLEMS AND PROSPECTS OF COMPOUND SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].
WIEDER, HH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1009-1018
[7]  
ZUR A, UNPUB
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