PROBLEMS AND PROSPECTS OF COMPOUND SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引:47
作者
WIEDER, HH
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期
关键词
D O I
10.1116/1.570582
中图分类号
O59 [应用物理学];
学科分类号
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页码:1009 / 1018
页数:10
相关论文
共 81 条
[1]   INP SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].
BARRERA, JS ;
ARCHER, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1023-1030
[2]   FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES [J].
BAYRAKTAROGLU, B ;
KOHN, E ;
HARTNAGEL, HL .
ELECTRONICS LETTERS, 1976, 12 (02) :53-54
[3]   GALLIUM ARSENIDE MOS TRANSISTORS [J].
BECKE, H ;
HALL, R ;
WHITE, J .
SOLID-STATE ELECTRONICS, 1965, 8 (10) :813-&
[4]   GAAS MESFET AS A PULSE REGENERATOR IN GIGABIT PER 2ND RANGE [J].
BENEKING, H ;
FILENSKY, W .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :385-386
[5]  
BERT G, 1976, IEEE J SOLID STATE C, V11, P3285
[6]   PHOTOEMISSION STUDIES OF SURFACE-STATES AND SCHOTTKY-BARRIER FORMATION ON INP [J].
CHYE, PW ;
BABALOLA, IA ;
SUKEGAWA, T ;
SPICER, WE .
PHYSICAL REVIEW B, 1976, 13 (10) :4439-4446
[7]   THE FIELD EFFECT TRANSISTOR [J].
DACEY, GC ;
ROSS, IM .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06) :1149-1189
[8]   VACANCIES NEAR SEMICONDUCTOR SURFACES [J].
DAW, MS ;
SMITH, DL .
PHYSICAL REVIEW B, 1979, 20 (12) :5150-5156
[9]  
DAW MS, PHYS REV B
[10]  
DECKER DR, 1975, 5TH P BIENN EL ENG C, P305