RECENT MODELS OF SCHOTTKY-BARRIER FORMATION

被引：117

作者：

TERSOFF, J

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1157 / 1161

页数：5

共 33 条

[1] SURFACE-INDUCED CHARGE DISTURBANCES IN FILLED BANDS [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1974, 10 (12) :4973-4979

[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[3] INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES [J].

BRUGGER, H ;

SCHAFFLER, F ;

ABSTREITER, G .

PHYSICAL REVIEW LETTERS, 1984, 52 (02) :141-144

[4] OBSERVATION OF SPIN-DEPENDENT THERMAL EMISSION FROM DEEP LEVELS IN SEMICONDUCTORS [J].

CHEN, MC ;

LANG, DV .

PHYSICAL REVIEW LETTERS, 1983, 51 (05) :427-429

[5] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES [J].

CHIARADIA, P ;

KATNANI, AD ;

SANG, HW ;

BAUER, RS .

PHYSICAL REVIEW LETTERS, 1984, 52 (14) :1246-1249

[6] SIZE DEPENDENCE OF EFFECTIVE BARRIER HEIGHTS OF MIXED-PHASE CONTACTS [J].

FREEOUF, JL ;

JACKSON, TN ;

LAUX, SE ;

WOODALL, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :570-573

[7] EFFECTIVE BARRIER HEIGHTS OF MIXED PHASE CONTACTS - SIZE EFFECTS [J].

FREEOUF, JL ;

JACKSON, TN ;

LAUX, SE ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :634-636

[8] ELEMENTARY THEORY OF HETEROJUNCTIONS [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1016-1021

[9] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

[10] NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS [J].

HICKMOTT, TW ;

SOLOMON, PM ;

FISCHER, R ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2844-2853

← 1 2 3 4 →