SIZE DEPENDENCE OF EFFECTIVE BARRIER HEIGHTS OF MIXED-PHASE CONTACTS

[1] BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177

[2] NEW METHOD FOR CONTROL OF SCHOTTKY-BARRIER HEIGHT [J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 67 - 69

[3] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 218 - 231

[4] COTTRELL PE, 1979, NUMERICAL ANAL SEMIC, P31

[5] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[6] EFFECTIVE BARRIER HEIGHTS OF MIXED PHASE CONTACTS - SIZE EFFECTS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 634 - 636

[7] SILICIDE SCHOTTKY BARRIERS - ELEMENTAL DESCRIPTION [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (10) : 1059 - 1061

[8] METAL CONTACTS TO CLEAN AND OXIDIZED CADMIUM TELLURIDE AND INDIUM-PHOSPHIDE SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 886 - 890

[9] LAUX SE, UNPUB

[10] PARALLEL SILICIDE CONTACTS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3735 - 3739

[1] BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177

[2] NEW METHOD FOR CONTROL OF SCHOTTKY-BARRIER HEIGHT [J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 67 - 69

[3] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 218 - 231

[4] COTTRELL PE, 1979, NUMERICAL ANAL SEMIC, P31

[5] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[6] EFFECTIVE BARRIER HEIGHTS OF MIXED PHASE CONTACTS - SIZE EFFECTS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 634 - 636

[7] SILICIDE SCHOTTKY BARRIERS - ELEMENTAL DESCRIPTION [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (10) : 1059 - 1061

[8] METAL CONTACTS TO CLEAN AND OXIDIZED CADMIUM TELLURIDE AND INDIUM-PHOSPHIDE SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 886 - 890

[9] LAUX SE, UNPUB

[10] PARALLEL SILICIDE CONTACTS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3735 - 3739