OBSERVATION OF SPIN-DEPENDENT THERMAL EMISSION FROM DEEP LEVELS IN SEMICONDUCTORS

被引：31

作者：

CHEN, MC

LANG, DV

机构：

来源：

PHYSICAL REVIEW LETTERS | 1983年 / 51卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.51.427

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：427 / 429

页数：3

共 10 条

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[9] TRANSIENT CAPACITANCE MEASUREMENTS OF HOLE EMISSION FROM INTERFACE STATES IN MOS STRUCTURES [J].

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