MOLECULAR-BEAM EPITAXY

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376

[2] [Anonymous], 1978, HETEROSTRUCTURE LASE

[3] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[4] LOW-NOISE MICROWAVE FETS FABRICATED BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1979, 15 (08) : 218 - 219

[5] GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 741 - 743

[6] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[7] CASEY HC, 1979, APPL PHYS LETT, V34, P594, DOI 10.1063/1.90886

[8] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 39 - 41

[9] SHUBNIKOV-DEHAAS OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (25) : 1489 - 1493

[10] OBSERVATION OF SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1504 - 1505

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376

[2] [Anonymous], 1978, HETEROSTRUCTURE LASE

[3] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[4] LOW-NOISE MICROWAVE FETS FABRICATED BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1979, 15 (08) : 218 - 219

[5] GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 741 - 743

[6] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[7] CASEY HC, 1979, APPL PHYS LETT, V34, P594, DOI 10.1063/1.90886

[8] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 39 - 41

[9] SHUBNIKOV-DEHAAS OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (25) : 1489 - 1493

[10] OBSERVATION OF SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1504 - 1505