BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES

[11] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) : 573 - 576

[12] Capasso F., 1985, Picosecond Electronics and Optoelectronics. Proceedings of the Topical Meeting, P112

[13] SEQUENTIAL RESONANT TUNNELING THROUGH A MULTIQUANTUM WELL SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (07) : 478 - 480

[14] NEW GRADED BAND-GAP PICOSECOND PHOTO-TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 93 - 95

[15] EFFECTIVE MASS FILTERING - GIANT QUANTUM AMPLIFICATION OF THE PHOTOCURRENT IN A SEMICONDUCTOR SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 420 - 422

[16] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869

[17] DOPING INTERFACE DIPOLES - TUNABLE HETEROJUNCTION BARRIER HEIGHTS AND BAND-EDGE DISCONTINUITIES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 664 - 666

[18] TUNABLE BARRIER HEIGHTS AND BAND DISCONTINUITIES VIA DOPING INTERFACE DIPOLES - AN INTERFACE ENGINEERING TECHNIQUE AND ITS DEVICE APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1245 - 1251

[19] CAPASSO F, 1985, GALLIUM ARSENIDE TEC, pCH8

[20] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595

[11] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) : 573 - 576

[12] Capasso F., 1985, Picosecond Electronics and Optoelectronics. Proceedings of the Topical Meeting, P112

[13] SEQUENTIAL RESONANT TUNNELING THROUGH A MULTIQUANTUM WELL SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (07) : 478 - 480

[14] NEW GRADED BAND-GAP PICOSECOND PHOTO-TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 93 - 95

[15] EFFECTIVE MASS FILTERING - GIANT QUANTUM AMPLIFICATION OF THE PHOTOCURRENT IN A SEMICONDUCTOR SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 420 - 422

[16] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869

[17] DOPING INTERFACE DIPOLES - TUNABLE HETEROJUNCTION BARRIER HEIGHTS AND BAND-EDGE DISCONTINUITIES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 664 - 666

[18] TUNABLE BARRIER HEIGHTS AND BAND DISCONTINUITIES VIA DOPING INTERFACE DIPOLES - AN INTERFACE ENGINEERING TECHNIQUE AND ITS DEVICE APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1245 - 1251

[19] CAPASSO F, 1985, GALLIUM ARSENIDE TEC, pCH8

[20] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595