TUNABLE BARRIER HEIGHTS AND BAND DISCONTINUITIES VIA DOPING INTERFACE DIPOLES - AN INTERFACE ENGINEERING TECHNIQUE AND ITS DEVICE APPLICATIONS

被引:37
作者
CAPASSO, F
MOHAMMED, K
CHO, AY
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期
关键词
D O I
10.1116/1.583049
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1245 / 1251
页数:7
相关论文
共 23 条
[1]   ON THE ADJUSTABILITY OF THE ABRUPT HETEROJUNCTION BAND-GAP DISCONTINUITY [J].
BAUER, RS ;
SANG, HW .
SURFACE SCIENCE, 1983, 132 (1-3) :479-504
[2]   HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS [J].
CAMPBELL, JC ;
DENTAI, AG ;
HOLDEN, WS ;
KASPER, BL .
ELECTRONICS LETTERS, 1983, 19 (20) :818-820
[3]   ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].
CAPASSO, F ;
TSANG, WT ;
HUTCHINSON, AL ;
WILLIAMS, GF .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40
[4]   STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].
CAPASSO, F ;
TSANG, WT ;
WILLIAMS, GF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :381-390
[5]   BAND-GAP ENGINEERING VIA GRADED GAP, SUPER-LATTICE, AND PERIODIC DOPING STRUCTURES - APPLICATIONS TO NOVEL PHOTODETECTORS AND OTHER DEVICES [J].
CAPASSO, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :457-461
[8]   PSEUDO-QUATERNARY GAINASP SEMICONDUCTORS - A NEW GA0.47IN0.53AS/INP GRADED GAP SUPERLATTICE AND ITS APPLICATIONS TO AVALANCHE PHOTODIODES [J].
CAPASSO, F ;
COX, HM ;
HUTCHINSON, AL ;
OLSSON, NA ;
HUMMEL, SG .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1193-1195
[9]   GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].
CHO, AY .
THIN SOLID FILMS, 1983, 100 (04) :291-317
[10]   OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].
FORREST, SR ;
KIM, OK ;
SMITH, RG .
APPLIED PHYSICS LETTERS, 1982, 41 (01) :95-98