NEW DEVICE APPLICATIONS OF BANDEDGE DISCONTINUITIES IN MULTILAYER HETEROJUNCTION STRUCTURES

[1] HIGH-SPEED PHOTODETECTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1335 - +

[2] Capasso F., 1981, International Electron Devices Meeting, P284

[3] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40

[4] THE CHANNELING AVALANCHE PHOTO-DIODE - A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N-JUNCTION DETECTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1388 - 1395

[5] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 381 - 390

[6] NEW ULTRA-LOW-NOISE AVALANCHE PHOTO-DIODE WITH SEPARATED ELECTRON AND HOLE AVALANCHE REGIONS [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 12 - 13

[7] CAPASSO F, 1982, IEEE T NUCL SCI, V20, P424

[8] CAPASSO F, 1982, I PHYS C SER, V63, P473

[9] CAPASSO F, 1982, P INT M ELECTRON DEV, P334

[10] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J]. ELECTRONICS LETTERS, 1980, 16 (12) : 467 - 469

[1] HIGH-SPEED PHOTODETECTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1335 - +

[2] Capasso F., 1981, International Electron Devices Meeting, P284

[3] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 38 - 40

[4] THE CHANNELING AVALANCHE PHOTO-DIODE - A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N-JUNCTION DETECTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1388 - 1395

[5] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 381 - 390

[6] NEW ULTRA-LOW-NOISE AVALANCHE PHOTO-DIODE WITH SEPARATED ELECTRON AND HOLE AVALANCHE REGIONS [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 12 - 13

[7] CAPASSO F, 1982, IEEE T NUCL SCI, V20, P424

[8] CAPASSO F, 1982, I PHYS C SER, V63, P473

[9] CAPASSO F, 1982, P INT M ELECTRON DEV, P334

[10] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J]. ELECTRONICS LETTERS, 1980, 16 (12) : 467 - 469