QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE

[1] ANALYSIS OF DC CHARACTERISTICS OF GAALAS-GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1986, 29 (02) : 141 - 149

[2] Asbeck P. M., 1985, Picosecond Electronics and Optoelectronics. Proceedings of the Topical Meeting, P32

[3] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[4] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368

[5] Capasso F., 1985, Picosecond Electronics and Optoelectronics. Proceedings of the Topical Meeting, P112

[6] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869

[7] RESONANT TUNNELING OF TWO-DIMENSIONAL ELECTRONS THROUGH A QUANTUM WIRE - A NEGATIVE TRANSCONDUCTANCE DEVICE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1347 - 1349

[8] LURYI S, 1986, APPL PHYS LETT, V48, P1693, DOI 10.1063/1.97043

[9] HIGH-GAIN, HIGH-FREQUENCY ALGAAS/GAAS GRADED BAND-GAP BASE BIPOLAR-TRANSISTORS WITH A BE DIFFUSION SETBACK LAYER IN THE BASE [J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 600 - 602

[10] NOVEL TRIODE DEVICE USING METAL-INSULATOR SUPERLATTICE PROPOSED FOR HIGH-SPEED RESPONSE [J]. ELECTRONICS LETTERS, 1986, 22 (01) : 58 - 59

[1] ANALYSIS OF DC CHARACTERISTICS OF GAALAS-GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1986, 29 (02) : 141 - 149

[2] Asbeck P. M., 1985, Picosecond Electronics and Optoelectronics. Proceedings of the Topical Meeting, P32

[3] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 888 - 890

[4] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1366 - 1368

[5] Capasso F., 1985, Picosecond Electronics and Optoelectronics. Proceedings of the Topical Meeting, P112

[6] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869

[7] RESONANT TUNNELING OF TWO-DIMENSIONAL ELECTRONS THROUGH A QUANTUM WIRE - A NEGATIVE TRANSCONDUCTANCE DEVICE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1347 - 1349

[8] LURYI S, 1986, APPL PHYS LETT, V48, P1693, DOI 10.1063/1.97043

[9] HIGH-GAIN, HIGH-FREQUENCY ALGAAS/GAAS GRADED BAND-GAP BASE BIPOLAR-TRANSISTORS WITH A BE DIFFUSION SETBACK LAYER IN THE BASE [J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 600 - 602

[10] NOVEL TRIODE DEVICE USING METAL-INSULATOR SUPERLATTICE PROPOSED FOR HIGH-SPEED RESPONSE [J]. ELECTRONICS LETTERS, 1986, 22 (01) : 58 - 59