INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS

被引：54

作者：

BONNEFOI, AR

CHOW, DH

MCGILL, TC

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.95966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：888 / 890

页数：3

共 16 条

[1] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J].

BARDEEN, J .

PHYSICAL REVIEW LETTERS, 1961, 6 (02) :57-&

[2] RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BONNEFOI, AR ;

COLLINS, RT ;

MCGILL, TC ;

BURNHAM, RD ;

PONCE, FA .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :285-287

[3] INELASTIC TUNNELING CHARACTERISTICS OF ALAS GAAS HETEROJUNCTIONS [J].

COLLINS, RT ;

LAMBE, J ;

MCGILL, TC ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :532-534

[4]

COLLINS RT, 1984, 17TH P INT C PHYS SE, P437

[5] TUNNELLING THROUGH GAAS-ALXGA1-XAS-GAAS DOUBLE HETEROJUNCTIONS [J].

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

ETIENNE, P ;

MASSIES, J ;

LAVIRON, M ;

CHAPLART, J ;

LINH, T .

ELECTRONICS LETTERS, 1982, 18 (02) :85-87

[6]

GEPPERT DV, 1962, P IRE, V50, P1527

[7] ELECTRON-TRANSPORT THROUGH THE MOCVD GROWN GAAS/ALGAAS/GAAS HETEROJUNCTION BARRIER [J].

HASE, I ;

KAWAI, H ;

KANEKO, K ;

WATANABE, N .

ELECTRONICS LETTERS, 1984, 20 (12) :491-492

[8] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED [J].

HEIBLUM, M .

SOLID-STATE ELECTRONICS, 1981, 24 (04) :343-366

[9] DEPENDENCE OF TUNNELING CURRENT ON STRUCTURAL VARIATIONS OF SUPERLATTICE DEVICES [J].

JOGAI, B ;

WANG, KL .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :167-168

[10]

MEAD CA, 1960, P IRE, V48, P359

← 1 2 →