HIGH-FREQUENCY AND LOW-FREQUENCY STEADY-STATE MIS CAPACITANCE

被引：4

作者：

NAKHMANSON, RS

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1980年 / 57卷 / 02期

关键词：

D O I：

10.1002/pssa.2210570208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：515 / 527

页数：13

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[4] IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J].

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[5]

Nakhmanson R. S., 1970, Physica Status Solidi A, V2, P627, DOI 10.1002/pssa.19700020324

[6]

Nakhmanson R.S., 1964, FIZ TVERD TELA, V6, P1115

[7] THEORY OF MIS CAPACITANCE [J].

NAKHMANSON, RS .

[8]

NAKHMANSON RS, 1964, THESIS MOSCOW

[9]

NAKHMANSON RS, 1971, 1970 P INT C PHYS CH, V5, P143

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

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