THEORY OF MIS CAPACITANCE

被引：17

作者：

NAKHMANSON, RS ^{[1
]}

机构：

[1] SEMICOND PHYS INST, NOVOSIBIRSK, USSR

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 09期

关键词：

D O I：

10.1016/0038-1101(76)90153-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：745 / 758

页数：14

共 31 条

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[4]

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[9] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

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