ACCURACY OF THEORETICAL HIGH-FREQUENCY SEMICONDUCTOR CAPACITANCE FOR INVERTED MOS STRUCTURES

被引：17

作者：

BACCARANI, G ^{[1
]}

SEVERI, M ^{[1
]}

机构：

[1] UNIV BOLOGNA, IST ELETTR, BOLOGNA, ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 01期

关键词：

D O I：

10.1109/T-ED.1974.17873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：122 / 125

页数：4

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