THEORY OF MIS CAPACITANCE

被引：17

作者：

NAKHMANSON, RS ^{[1
]}

机构：

[1] SEMICOND PHYS INST, NOVOSIBIRSK, USSR

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 09期

关键词：

D O I：

10.1016/0038-1101(76)90153-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：745 / 758

页数：14

共 31 条

[21]

Pierret R. F., 1970, Solid-State Electronics, V13, P269, DOI 10.1016/0038-1101(70)90179-6

[22] EXACT ANALYTICAL SOLUTION OF HIGH FREQUENCY LOSSLESS MOS CAPACITANCE-VOLTAGE CHARACTERISTICS AND VALIDITY OF CHARGE ANALYSIS [J].

SAH, CT ;

PIERRET, RF ;

TOLE, AB .

SOLID-STATE ELECTRONICS, 1969, 12 (09) :681-+

[23]

SAH CT, 1967, PR INST ELECTR ELECT, V55, P654

[24]

SAH CT, 1967, PR INST ELECTR ELECT, V55, P672

[25] EQUIVALENT CIRCUIT MODEL IN SOLID-STATE ELECTRONICS .3. CONDUCTION AND DISPLACEMENT CURRENTS [J].

SAH, CT .

SOLID-STATE ELECTRONICS, 1970, 13 (12) :1547-+

[26] ERROR ANALYSIS OF SURFACE STATE DENSITY DETERMINATION USING MOS CAPACITANCE METHOD [J].

SAH, CT ;

TOLE, AB ;

PIERRET, RF .

SOLID-STATE ELECTRONICS, 1969, 12 (09) :689-+

[27] ELECTRONS, HOLES, AND TRAPS [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :973-990

[28] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[29] IRREVERSIBLE THERMODYNAMICS AND CARRIER DENSITY FLUCTUATIONS IN SEMICONDUCTORS [J].

VANVLIET, KM .

PHYSICAL REVIEW, 1958, 110 (01) :50-61

[30]

YUNOVICH AE, 1960, SOV PHYS-SOL STATE, V1, P998

← 1 2 3 4 →