IMPROVED HIGH-FREQUENCY MOS CAPACITANCE FORMULA

被引：47

作者：

BREWS, JR ^{[1
]}

机构：

[1] BELL TEL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.1663401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1276 / 1279

页数：4

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[10] EXACT FREQUENCY-DEPENDENT COMPLEX ADMITTANCE OF MOS DIODE INCLUDING SURFACE STATES, SHOCKLEY-READ-HALL (SRH) IMPURITY EFFECTS, AND LOW-TEMPERATURE DOPANT IMPURITY RESPONSE
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