EXACT FREQUENCY-DEPENDENT COMPLEX ADMITTANCE OF MOS DIODE INCLUDING SURFACE STATES, SHOCKLEY-READ-HALL (SRH) IMPURITY EFFECTS, AND LOW-TEMPERATURE DOPANT IMPURITY RESPONSE

被引：28

作者：

TEMPLE, V

SHEWCHUN, J

机构：

[1] MCMASTER UNIV, ENGN PHYS DEPT, HAMILTON, ONTARIO, CANADA

[2] MCMASTER UNIV, INST MAT RES, HAMILTON, ONTARIO, CANADA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 01期

关键词：

D O I：

10.1016/0038-1101(73)90129-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：93 / 113

页数：21

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