IMPURITY CONCENTRATION DEPENDENCE OF DENSITY OF STATES IN SEMICONDUCTORS

[1] BONCHBRUYEVICH VL, 1966, ELECTRONIC THEORY HE

[2] INVESTIGATION OF CURRENT-GAIN TEMPERATURE DEPENDENCE IN SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 117 - +

[3] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1967, 162 (03): : 660 - +

[4] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[5] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[6] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[7] GROVE AS, 1967, PHYSICS TECHNOLOGY T

[8] HUANG CJ, 1967, J APPL PHYS, V38, P4811

[9] BAND STRUCTURE IN DISORDERED ALLOYS AND IMPURITY SEMICONDUCTORS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 840 - 848

[10] JONSCHER AK, 1960, PRINCIPLES SEMICONDU

[1] BONCHBRUYEVICH VL, 1966, ELECTRONIC THEORY HE

[2] INVESTIGATION OF CURRENT-GAIN TEMPERATURE DEPENDENCE IN SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 117 - +

[3] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1967, 162 (03): : 660 - +

[4] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[5] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706

[6] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[7] GROVE AS, 1967, PHYSICS TECHNOLOGY T

[8] HUANG CJ, 1967, J APPL PHYS, V38, P4811

[9] BAND STRUCTURE IN DISORDERED ALLOYS AND IMPURITY SEMICONDUCTORS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 840 - 848

[10] JONSCHER AK, 1960, PRINCIPLES SEMICONDU