FREEZE-OUT CHARACTERISTICS OF MOS VARACTOR

被引:38
作者
GRAY, PV
BROWN, DM
机构
关键词
D O I
10.1063/1.1652594
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:247 / &
相关论文
共 11 条
[1]   IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION [J].
ATALLA, MM ;
TANNENBAUM, E .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04) :933-946
[2]  
BALK P, 1965, MAY EL SOC M PAP SAN
[3]   SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J].
BROWN, DM ;
GRAY, PV .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :760-+
[4]   OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE [J].
DEAL, BE ;
GROVE, AS ;
SNOW, EH ;
SAH, CT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :308-&
[5]  
DELORD JF, 1965, B AM PHYS SOC, V10, P546
[6]   DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].
GRAY, PV ;
BROWN, DM .
APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&
[7]  
GRAY PV, 1968, MAY BOST M EL SOC
[8]   REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].
GROVE, AS ;
SAH, CT ;
LEISTIKO, O .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&
[9]   MOS STUDY OF INTERFACE-STATE TIME CONSTANT DISPERSION [J].
NICOLLIAN, EH ;
GOETZBERGER, A .
APPLIED PHYSICS LETTERS, 1967, 10 (02) :60-+
[10]  
SAH CT, 1964, 1 SOLID STAT EL LAB