AVALANCHE BREAKDOWN IN SILICON DIFFUSED JUNCTIONS

被引：14

作者：

WARNER, RM

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 12期

关键词：

D O I：

10.1016/0038-1101(72)90123-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1303 / +

页数：1

共 28 条

[1]

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[2]

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[3]

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[4]

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[7]

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KOKOSA, RA ;

DAVIES, RL .

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[9] DIFFUSED JUNCTION DEPLETION LAYER CALCULATIONS [J].

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WARNER, RM .

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[10] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

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