DEPOSITION OF ELECTRICALLY CONDUCTING POLYBITHIOPHENE INTO POROUS SILICON

被引：14

作者：

JUNG, KG ^{[1
]}

SCHULTZE, JW ^{[1
]}

THONISSEN, M ^{[1
]}

MUNDER, H ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST SCHICHT & IONENTECH, D-52425 JULICH, GERMANY

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

ELECTROCHEMISTRY; NANOSTRUCTURES; POLYMERS; SILICON;

D O I：

10.1016/0040-6090(94)05618-N

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polybithiophene (PBT) can be deposited anodically within the pores of porous silicon (PS) from an organic electrolyte under mild conditions. Three different stages of the polymerization are observed: (i) silicon oxidation and PBT nucleation, (ii) growth of PBT (iii) formation of a PBT overlayer. The system PBT/PS was characterized electrochemically and by means of electron spectroscopy for chemical analysis and scanning electron microscopy. A complete oxidation of the PS is not observed. By X-ray photoelectron spectroscopy depth profiling and variations in the thickness of the porous silicon layers the growth of PBT within the pores was proved. Two different models for the polymerization process are discussed.

引用

页码：317 / 320

页数：4

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