OPTICAL CHARACTERIZATION OF POROUS SILICON LAYERS FORMED ON HEAVILY P-DOPED SUBSTRATES

被引：11

作者：

MUNDER, H

ANDRZEJAK, C

BERGER, MG

EICKHOFF, T

LUTH, H

THEISS, W

ROSSOW, U

RICHTER, W

HERINO, R

LIGEON, M

机构：

[1] RHEIN WESTFAL TH AACHEN, INST PHYS 1, W-5100 AACHEN, GERMANY

[2] TECH UNIV BERLIN, INST FESTKORPERPHYS, W-1000 BERLIN 12, GERMANY

[3] UNIV GRENOBLE 1, SPECTROMETRIE PHYS LAB, F-38402 ST MARTIN DHERES, FRANCE

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90206-D

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Porous Si layers formed on heavily p-type doped wafers are investigated by Raman spectroscopy, infrared spectroscopy and ellipsometry. The influence of different porosities and the changes caused by the partial oxidation of the porous layers are studied. Shifts in the phonon frequencies are related to the formation of microcrystals. The infrared spectra are fitted by using the sophisticated Bergman formalism to include topology effects. By infrared spectroscopy two phonon processes are only observed in non-preoxidized samples. Spectroscopical ellipsometry yields a modification of the dielectric function. The E1 and E2 gaps are shifted towards lower energies and the imaginary part shows a broadening of the structures.

引用

页码：6 / 10

页数：5

共 16 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].