ANGULAR RESOLVED PHOTOEMISSION FROM SURFACE-STATES ON RECONSTRUCTED [100] GAAS-SURFACES

被引：23

作者：

LARSEN, PK ^{[1
]}

NEAVE, JH ^{[1
]}

JOYCE, BA ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL,SURREY,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1979年 / 12卷 / 22期

关键词：

D O I：

10.1088/0022-3719/12/22/009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two prominent surface states have been observed in angular resolved photoemission measurements on reconstructed (2*4) and (4*2) GaAs (100) surfaces, which were grown in situ by molecular beam epitaxy. Changes brought about by adsorption of H2 and O2, and also by annealing, indicate the presence on each type of surface of both an As-associated and a Ga-associated surface state. It is also shown that the symmetry of the repeated surface Brillouin zone of the As-stable (2*4) reconstructed surface is observed for the As-associated surface state.

引用

页码：L869 / L874

页数：6

共 17 条

[1] GAAS(100) - ITS SPECTRUM, EFFECTIVE CHARGE, AND RECONSTRUCTION PATTERNS [J].