ANGULAR RESOLVED UPS OF SURFACE-STATES ON GAAS(111) PREPARED BY MOLECULAR-BEAM EPITAXY

被引:47
作者
JACOBI, K
MUSCHWITZ, CV
RANKE, W
机构
[1] Fritz-Haber-Institut der Max-Planck-Gesellschaft, D-1000 Berlin 33
关键词
D O I
10.1016/0039-6028(79)90334-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The As-rich (2 × 2), a newly found (√3 × √3) and the (√19 × √19) surfaces of GaAs(1̄1̄1̄) are studied by angular resolved UPS (ARUPS). The (2 × 2) surface is prepared by molecular beam epitaxy and the others by mild annealing. For the (2 × 2) surface emission from surface states is observed, which shows dispersion periodic within the (2 × 2) surface Brillouin zone. Using s-polarized light and the known symmetry selection rules the uppermost surface bands between 1 and 2 eV below the valence band maximum are assigned to the As dangling bond orbital. The bands near 4 and 7 eV assigned to the backbonds. From the strong decrease of emission intensity of the As-derived surface states between the (2 × 2) and the annealed surfaces it is concluded that the character of the As dangling bond orbital must have been changed from sp3-hybridic to s-like. This gives further evidence for our recently proposed model for the (√19 × √19) surface, which is particularly applicable for the (√3 × √3) surface. © 1979.
引用
收藏
页码:270 / 282
页数:13
相关论文
共 36 条
[1]   SI(2X1) SURFACE - THEORY OF ITS SPECTROSCOPY [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW B, 1975, 12 (04) :1410-1417
[2]   ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION AT CLEAVAGE SURFACE OF ZINCBLENDE COMPOUNDS [J].
CALANDRA, C ;
MANGHI, F ;
BERTONI, CM .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (11) :1911-1927
[3]   SURFACE-STRUCTURE AND ORBITAL SYMMETRIES OF (110) SURFACE-STATES OF GAAS [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :631-636
[4]   RELAXATION EFFECTS ON (110) SURFACE OF GAAS [J].
CHELIKOWSKY, JR ;
LOUIE, SG ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (10) :4724-4726
[5]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[6]  
FORSTMANN F, 1978, PHOTOEMISSION SURFAC
[8]   CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :427-433
[9]   MULTIPLE TECHNIQUE UHV CHAMBER FOR INVESTIGATION OF EPITAXIALLY GROWN SEMICONDUCTOR SURFACES [J].
GENG, P ;
RANKE, W ;
JACOBI, K .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1976, 9 (11) :924-925
[10]   SURFACE STATE BAND ON GAAS (110) FACE [J].
GREGORY, PE ;
SPICER, WE ;
CIRACI, S ;
HARRISON, WA .
APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514