ON THE POSSIBILITY OF APPLICATION OF X-RAY-DIFFRACTION EDGE CONTRAST FOR THE QUANTITATIVE-DETERMINATION OF HIGH-ENERGY HEAVY-ION RANGE IN SILICON

被引：5

作者：

AULEYTNER, J

BAKMISIUK, J

FURMANIK, Z

MORAWIEC, J

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1988年 / 23卷 / 01期

关键词：

D O I：

10.1002/crat.2170230124

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：K20 / K24

页数：5

相关论文

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CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (04) :K59-K62

[2]

QUERE Y, 1973, 4 P INT SUMM SCH DEF, P11

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