IDENTIFICATION OF PARAMAGNETIC ASGA AND OPTICAL EL2 CENTERS IN SEMI-INSULATING GALLIUM-ARSENIDE

被引:17
作者
WANG, GG [1 ]
ZOU, YX [1 ]
机构
[1] UNIV STRASBOURG 1,SPECT & OPT CORPS SOLID LAB,CNRS,UNITE 232,F-67084 STRASBOURG,FRANCE
关键词
D O I
10.1063/1.341133
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2595 / 2602
页数:8
相关论文
共 39 条
[1]   ASGA ANTISITE DEFECT IN GAAS [J].
BACHELET, GB ;
SCHLUTER, M ;
BARAFF, GA .
PHYSICAL REVIEW B, 1983, 27 (04) :2545-2547
[2]   PHOTORESPONSE OF THE ASGA ANTISITE DEFECT IN AS-GROWN GAAS [J].
BAEUMLER, M ;
KAUFMANN, U ;
WINDSCHEIF, J .
APPLIED PHYSICS LETTERS, 1985, 46 (08) :781-783
[3]   BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (21) :2340-2343
[4]   ELECTRON-PARAMAGNETIC RESONANCE ANALYSIS OF STRAIN-INDUCED DEFECTS IN SEMIINSULATING GAAS [J].
BENAKKI, S ;
GOLTZENE, A ;
SCHWAB, C ;
WANG, GY ;
ZOU, YX .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 138 (01) :143-149
[5]   TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS [J].
BHATTACHARYA, PK ;
KU, JW ;
OWEN, SJT ;
AEBI, V ;
COOPER, CB ;
MOON, RL .
APPLIED PHYSICS LETTERS, 1980, 36 (04) :304-306
[6]  
BROZEL MR, 1984, 3RD P C SEM 3 5 MAT, P287
[7]   CREATION OF ASGA DEFECTS BY PLASTIC-DEFORMATION OF GAAS CRYSTALS [J].
FIGIELSKI, T ;
WOSINSKI, T ;
MORAWSKI, A .
JOURNAL DE PHYSIQUE, 1983, 44 (NC-4) :353-357
[8]   ELECTRON-PARAMAGNETIC RESONANCE DETERMINATION OF THE GENERATION RATE OF AS ANTISITES IN FAST-NEUTRON IRRADIATED GAAS [J].
GOLTZENE, A ;
MEYER, B ;
SCHWAB, C .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3117-3120
[9]   SELECTIVE SATURATION OF PARAMAGNETIC DEFECTS IN ELECTRON-IRRADIATED AND NEUTRON-IRRADIATED GAAS [J].
GOLTZENE, A ;
MEYER, B ;
SCHWAB, C ;
BEALL, RB ;
NEWMAN, RC ;
WHITEHOUSE, JE ;
WOODHEAD, J .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5196-5198
[10]   ELECTRON-PARAMAGNETIC RESONANCE MONITORING OF RECOVERY OF FAST-NEUTRON IRRADIATED GAAS [J].
GOLTZENE, A ;
MEYER, B ;
SCHWAB, C .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1332-1335