SELECTIVE SATURATION OF PARAMAGNETIC DEFECTS IN ELECTRON-IRRADIATED AND NEUTRON-IRRADIATED GAAS

被引：23

作者：

GOLTZENE, A ^{[1
]}

MEYER, B ^{[1
]}

SCHWAB, C ^{[1
]}

BEALL, RB ^{[1
]}

NEWMAN, RC ^{[1
]}

WHITEHOUSE, JE ^{[1
]}

WOODHEAD, J ^{[1
]}

机构：

[1] UNIV READING,JJ THOMSON PHYS LAB,READING RG6 2AH,BERKS,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.335256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5196 / 5198

页数：3

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[3] ELECTRON-PARAMAGNETIC RESONANCE MONITORING OF RECOVERY OF FAST-NEUTRON IRRADIATED GAAS [J].

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[4] ELECTRON-PARAMAGNETIC RESONANCE SPECTROSCOPY OF FAST NEUTRON-GENERATED DEFECTS IN GAAS [J].

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KENNEDY, TA .

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[5] ON THE GENERATION OF PARAMAGNETIC DEFECTS BY THE ABRAHAMS-BUIOCCHI ETCHANT ON SEMI-INSULATING GAAS [J].

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[6]

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[7]

GOLTZENE A, 1984, RADIAT EFF, V82, P47

[8] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J].

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[9] PAIR SPECTRA IN GAP [J].

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[10]

Kelly B.T., 1966, IRRADIATION DAMAGE S

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