MEASUREMENT OF VALENCE BAND AUGER-SPECTRA FOR GAAS(110) FROM GA AND AS-CCV TRANSITIONS

The line shapes of the Ga and As M//1M//4//5V and M//2//3M//4//5V Auger transitions in cleaved GaAs(110) have been measured. The line shapes are quite different, indicating that the Auger effect gives a measure of the density of filled states local to the atomic species with the initial core hole. Comparisons with the calculated local density of states for one model of the GaAs(110) surface and with Auger transitions derived for this model are made. A total transition density of filled states is synthesized by adding the Ga and As results and is compared with photoelectron spectroscopic measurements. The resulting good agreement indicates that hole-hole interactions are not severe in this system.