GROWTH OF IRSI3 BY MOLECULAR-BEAM EPITAXY

被引：5

作者：

LIN, TL

NIEH, CW

HASHIMOTO, S

XIAO, QF

机构：

[1] CALTECH,KECK LAB ENGN,PASADENA,CA 91125

[2] SUNY ALBANY,INST PARTICLE SOLID INTERACT,ALBANY,NY 12222

[3] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

来源：

THIN SOLID FILMS | 1990年 / 184卷

基金：

美国国家航空航天局; 美国国家科学基金会;

关键词：

D O I：

10.1016/0040-6090(90)90430-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial IrSi3 films have been grown on Si(111) by molecular beam epitaxy at temperatures ranging from 630 to 800°C. Good surface morphology was observed for IrSi3 layers grown at temperatures below 680°C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes. A minimum channeling yield of 52% was observed for the IrSi3 layer MBE grown at 630°C by Rutherford backscattering spectroscopy. © 1990.

引用

页码：343 / 348

页数：6

共 7 条

[1] LOCALIZED EPITAXIAL-GROWTH OF IRSI3 ON (111)SILICON AND (001)SILICON [J].