FORMATION OF IRIDIUM SILICIDES FROM IR THIN-FILMS ON SI SUBSTRATES

被引：101

作者：

PETERSSON, S ^{[1
]}

BAGLIN, J ^{[1
]}

HAMMER, W ^{[1
]}

DHEURLE, F ^{[1
]}

KUAN, TS ^{[1
]}

OHDOMARI, I ^{[1
]}

SOUSAPIRES, JD ^{[1
]}

TOVE, P ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 05期

关键词：

D O I：

10.1063/1.326325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of iridium silicides from the interaction of iridium films with single-crystal silicon substrates has been studied from 350 to 1000 °C. Three distinct phases, IrSi, IrSi1.75(?), and IrSi3, were identified. Different modes of formation were observed and investigated. IrSi and IrSi1.75 form in layers parallel to the substrate at temperatures from 350 to 900 °C. The growth of IrSi3 from nuclei that spread laterally occurs at about 1000 °C, where possible the kinetics were systematically studies.

引用

页码：3357 / 3365

页数：9

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