SILICON OXINITRIDE AND ALUMINUM FILMS INTERFACE - RUTHERFORD BACKSCATTERING AND HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPIC STUDIES

被引：4

作者：

DIATEZUA, MD ^{[1
]}

THIRY, PA ^{[1
]}

TERWAGNE, G ^{[1
]}

CAUDANO, R ^{[1
]}

机构：

[1] FAC UNIV NOTRE DAME PAIX, INST STUDIES INTERFACE SCI, ANAL REACT NUCL LAB, B-5000 NAMUR, BELGIUM

来源：

SURFACE SCIENCE | 1992年 / 269卷

关键词：

D O I：

10.1016/0039-6028(92)91392-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, we report on the growth and characterization of SiOxNy/Al films used as coating for static radiative cooling devices. Aluminum films were deposited by e-beam evaporation in high vacuum conditions. Silicon oxinitride overcoating aluminum was grown by RF reactive plasma sputtering in a mixed oxygen-nitrogen atmosphere. For the Rutherford backscattering spectroscopic (RBS) study, a carbon disc was the substrate. As for the high resolution electron-energy-loss spectroscopy (HREELS) experiments, silicon substrates were used. RBS and HREELS studies showed that the silicon oxinitride/aluminum interface consists of two clearly distinct regions: one is a thin silicon nitride layer and the other one is aluminum oxide. This means that a dynamic phenomenon takes place at the interface. This phenomenon induces oxygen migration towards aluminum. Then the first silicon oxinitride monolayers are depleted in oxygen, leaving silicon nitride and forming a thin film of aluminum oxide.

引用

页码：1054 / 1059

页数：6

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