CHARACTERIZATION OF LPCVD AND PECVD SILICON OXYNITRIDE FILMS

被引：20

作者：

HABRAKEN, FHPM

机构：

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(87)90092-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：186 / 196

页数：11

共 35 条

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[2]

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[3] PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J].

DENISSE, CMM ;

TROOST, KZ ;

ELFERINK, JBO ;

HABRAKEN, FHPM ;

VANDEWEG, WF ;

HENDRIKS, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2536-2542

[4] ANNEALING OF PLASMA SILICON OXYNITRIDE FILMS [J].

DENISSE, CMM ;

TROOST, KZ ;

HABRAKEN, FHPM ;

VANDERWEG, WF ;

HENDRIKS, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2543-2547

[5]

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[6] HYDROGEN DISTRIBUTION IN OXYNITRIDE OXIDE STRUCTURES [J].

ELFERINK, JBO ;

VANDERHEIDE, UA ;

BIK, WMA ;

HABRAKEN, FHPM ;

VANDERWEG, WF .

APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :197-203

[7] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS [J].

HABRAKEN, FHPM ;

KUIPER, AET ;

VANOOSTROM, A ;

TAMMINGA, Y ;

THEETEN, JB .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :404-415

[8] HYDROGEN IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON (OXY)NITRIDE FILMS [J].

HABRAKEN, FHPM ;

TIJHAAR, RHG ;

VANDERWEG, WF ;

KUIPER, AET ;

WILLEMSEN, MFC .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :447-453

[9] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].

HABRAKEN, FHPM ;

KUIPER, AET ;

TAMMINGA, Y .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6996-7002

[10]

HABRAKEN FHPM, 1984, P IN DEPTH REVIEW NU, P50

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