ANNEALING OF PLASMA SILICON OXYNITRIDE FILMS

被引：80

作者：

DENISSE, CMM ^{[1
]}

TROOST, KZ ^{[1
]}

HABRAKEN, FHPM ^{[1
]}

VANDERWEG, WF ^{[1
]}

HENDRIKS, M ^{[1
]}

机构：

[1] ADV SEMICOND MAT EUROPE BV,3723 BS BILTHOVEN,NETHERLANDS

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2543 / 2547

页数：5

共 17 条

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[2] PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS
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[3] HYDROGEN IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON (OXY)NITRIDE FILMS
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 447 - 453
[4] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
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[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2473 - 2477
[5] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS
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[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (08) : 571 - 576
[6] HYDROGEN-BONDING CONFIGURATIONS IN SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 484 - 489
[7] MAES HE, 1983, J ELECTROCHEM SOC, V83, P73
[8] ANNEALING BEHAVIOR OF HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOY-FILMS PREPARED BY SPUTTERING
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OOZORA, S
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 119 (02): : 715 - 720
[9] Pauling L., 1960, CHEM BOND
[10] CHEMICAL-SHIFTS OF SI-H STRETCHING FREQUENCIES AT SI(100) SURFACES PRE-EXPOSED TO OXYGEN IN THE SUBMONOLAYER RANGE
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GOPEL, W
LAPEYRE, GJ
[J]. SURFACE SCIENCE, 1984, 139 (2-3) : L209 - L218

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