HYDROGEN-BONDING CONFIGURATIONS IN SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION

被引：71

作者：

MAEDA, M

NAKAMURA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 01期

关键词：

D O I：

10.1063/1.335650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：484 / 489

页数：6

共 14 条

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[10] INSULATION DEGRADATION AND ANOMALOUS ETCHING PHENOMENA IN SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J].

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