INSULATION DEGRADATION AND ANOMALOUS ETCHING PHENOMENA IN SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION

被引:13
作者
MAEDA, M
NAKAMURA, H
机构
关键词
D O I
10.1016/0040-6090(84)90218-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:279 / 288
页数:10
相关论文
共 9 条
[1]  
KAMOSHIDA K, COMMUNICATION
[2]   ADVANCES IN DEPOSITION PROCESSES FOR PASSIVATION FILMS [J].
KERN, W ;
ROSLER, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05) :1082-1099
[3]   ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J].
MAEDA, M ;
ARITA, Y .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6852-6856
[4]  
SHANNON WJ, 1970, RCA REV, V31, P431
[5]   ELECTRICAL-PROPERTIES OF SI-N FILMS DEPOSITED ON SILICON FROM REACTIVE PLASMA [J].
SINHA, AK ;
SMITH, TE .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2756-2760
[6]   PREPARATION AND PROPERTIES OF THIN FILM SILICON-NITROGEN COMPOUNDS PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION [J].
SWANN, RCG ;
MEHTA, RR ;
CAUGE, TP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :713-&
[7]  
VANDEVEN EPGT, 1981, SOLID STATE TECHNOL, V24, P167
[8]  
Yamaguchi T., UNPUB
[9]   CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS [J].
YOKOYAMA, S ;
KAJIHARA, N ;
HIROSE, M ;
OSAKA, Y ;
YOSHIHARA, T ;
ABE, H .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5470-5474