HYDROGEN-BONDING CONFIGURATIONS IN SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION

被引：71

作者：

MAEDA, M

NAKAMURA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 01期

关键词：

D O I：

10.1063/1.335650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：484 / 489

页数：6

相关论文

共 14 条

[11] INFRARED SPECTROSCOPIC STUDY OF HYDROGENATED AND DEUTERATED SILICON-NITRIDE FILMS PREPARED FROM PLASMA-ENHANCED DEPOSITION [J].

MAEDA, M ;

NAKAMURA, H .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3068-3071

[12]

MAR KM, 1980, SOLID STATE TECHNOL, V23, P137

[13] HYDROGEN CONCENTRATION PROFILES AND CHEMICAL BONDING IN SILICON-NITRIDE [J].

PEERCY, PS ;

STEIN, HJ ;

DOYLE, BL ;

PICRAUX, ST .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (01) :11-24

[14] ANALYSIS OF HYDROGEN CONTENT IN PLASMA SILICON-NITRIDE FILM [J].

YOSHIMI, T ;

SAKAI, H ;

TANAKA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) :1853-1854