INFRARED SPECTROSCOPIC STUDY OF HYDROGENATED AND DEUTERATED SILICON-NITRIDE FILMS PREPARED FROM PLASMA-ENHANCED DEPOSITION

被引：18

作者：

MAEDA, M

NAKAMURA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

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D O I：

10.1063/1.333302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3068 / 3071

页数：4

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共 7 条

[1] BARROW GM, 1962, MOL SPECTROSC, pCH4
[2] GRUEN DM, 1976, J CHEM PHYS, V64, P5000, DOI 10.1063/1.432151
[3] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
LANFORD, WA
RAND, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2473 - 2477
[4] MAR KM, 1980, SOLID STATE TECHNOL, V23, P137
[5] HYDROGEN CONCENTRATION PROFILES AND CHEMICAL BONDING IN SILICON-NITRIDE
PEERCY, PS
STEIN, HJ
DOYLE, BL
PICRAUX, ST
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (01) : 11 - 24
[6] OPTICAL-EMISSION SPECTROSCOPY OF THE SIH-4-NH-3-H-2 PLASMA DURING THE GROWTH OF SILICON-NITRIDE
YOKOYAMA, S
HIROSE, M
OSAKA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L117 - L120
[7] ANALYSIS OF HYDROGEN CONTENT IN PLASMA SILICON-NITRIDE FILM
YOSHIMI, T
SAKAI, H
TANAKA, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : 1853 - 1854