HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS

被引:225
作者
BIEGELSEN, DK
STREET, RA
TSAI, CC
KNIGHTS, JC
机构
[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304
来源
PHYSICAL REVIEW B | 1979年 / 20卷 / 12期
关键词
D O I
10.1103/PhysRevB.20.4839
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Changes in the composition and electronic properties of plasma-deposited a-Si: H after annealing at temperatures through 600°C are studied by ESR, luminescence, infrared spectroscopy and hydrogen evolution. The generation of paramagnetic defects in a-Si: H on annealing is found to depend only on the amount of hydrogen evolved. The relation of peaks in the hydrogen-evolution rate to specific local hydrogen-bonding environments is studied and shown to be dominated by the effects of diffusion and sample microstructure. © 1979 The American Physical Society.
引用
收藏
页码:4839 / 4846
页数:8
相关论文
共 17 条
  • [1] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
  • [2] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON
    BRODSKY, MH
    FRISCH, MA
    ZIEGLER, JF
    LANFORD, WA
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 561 - 563
  • [3] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON
    CARLSON, DE
    MAGEE, CW
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83
  • [4] HYDROGEN CONTENT AND DENSITY OF PLASMA-DEPOSITED AMORPHOUS SILICON-HYDROGEN
    FRITZSCHE, H
    TANIELIAN, M
    TSAI, CC
    GACZI, PJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3366 - 3369
  • [5] FRITZSCHE H, 1977, 7TH P INT C AM LIQ S, P3
  • [6] KNIGHTS JC, 1978, PHILOS MAG B, V37, P467, DOI 10.1080/01418637808225790
  • [7] KNIGHTS JC, 1979, APPL PHYS LETT, V35, P242
  • [8] HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS SILICON FILMS
    MATYSIK, KJ
    MOGAB, CJ
    BAGLEY, BG
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 302 - 304
  • [9] KINETICS OF DECOMPOSITION OF AMORPHOUS HYDROGENATED SILICON FILMS
    MCMILLAN, JA
    PETERSON, EM
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5238 - 5241
  • [10] PANKOVE JI, 1977, 7TH P INT C AM LIQ S, P402