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- [1] WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L811 - L813KURATA, HHIROSE, MOSAKA, Y
- [2] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2473 - 2477LANFORD, WARAND, MJ
- [3] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (08) : 571 - 576LUCOVSKY, G
- [4] GLOW-DISCHARGE A-SI1-XCX - H FILMS STUDIED BY ELECTRON-SPIN-RESONANCE AND IR MEASUREMENTS[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02): : L119 - L121MORIMOTO, AMIURA, TKUMEDA, MSHIMIZU, T
- [5] DEFECTS IN HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY-FILMS PREPARED BY GLOW-DISCHARGE DECOMPOSITION AND SPUTTERING[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7299 - 7305MORIMOTO, AMIURA, TKUMEDA, MSHIMIZU, T
- [6] ELECTRON-SPIN-RESONANCE AND IR STUDIES ON A-SI1-XGEX-H PREPARED BY GLOW-DISCHARGE DECOMPOSITION[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L833 - L836MORIMOTO, AMIURA, TKUMEDA, MSHIMIZU, T
- [7] NMR AND IR STUDIES ON HYDROGENATED AMORPHOUS SI1-XCX FILMS[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (03): : L176 - L178NAKAZAWA, KUEDA, SKUMEDA, MMORIMOTO, ASHIMIZU, T
- [8] PREFERENTIAL ATTACHMENT OF H IN AMORPHOUS HYDROGENATED BINARY SEMICONDUCTORS AND CONSEQUENT INFERIOR REDUCTION OF PSEUDOGAP STATE DENSITY[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (15) : 1016 - 1020PAUL, WPAUL, DKVONROEDERN, BBLAKE, JOGUZ, S
- [9] INFRARED-SPECTRUM AND STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01): : 43 - 56SHANKS, HFANG, CJLEY, LCARDONA, MDEMOND, FJKALBITZER, S
- [10] DEFECTS IN AMORPHOUS SI-N FILMS PREPARED BY RF SPUTTERING[J]. SOLAR ENERGY MATERIALS, 1982, 8 (1-3): : 311 - 317SHIMIZU, TOOZORA, SMORIMOTO, AKUMEDA, MISHII, N