DEFECTS IN AMORPHOUS SI-N FILMS PREPARED BY RF SPUTTERING

被引：62

作者：

SHIMIZU, T

OOZORA, S

MORIMOTO, A

KUMEDA, M

ISHII, N

机构：

来源：

SOLAR ENERGY MATERIALS | 1982年 / 8卷 / 1-3期

关键词：

D O I：

10.1016/0165-1633(82)90074-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

收藏

页码：311 / 317

页数：7

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[1] THE EFFECTS OF H AND F ON THE ELECTRON-SPIN-RESONANCE SIGNALS IN A-SI
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[2] THE G-VALUES OF DEFECTS IN AMORPHOUS C, SI AND GE
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[3] A SIMPLE MOLECULAR-ORBITAL CALCULATION OF ELECTRON-SPIN-RESONANCE G-VALUES FOR AMORPHOUS SI1-XCX, SI1-XGEX AND GE1-XCX
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[4] CORRECTION
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[6] CHEMICAL BONDING STATES IN THE AMORPHOUS SIXC1-X-H SYSTEM STUDIED BY X-RAY PHOTOEMISSION SPECTROSCOPY AND INFRARED-ABSORPTION SPECTRA
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[7] WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L811 - L813
[8] STRUCTURE CHARACTERIZATION OF CVD AMORPHOUS SI3N4 BY PULSED NEUTRON TOTAL SCATTERING
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[9] GLOW-DISCHARGE A-SI1-XCX - H FILMS STUDIED BY ELECTRON-SPIN-RESONANCE AND IR MEASUREMENTS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02): : L119 - L121
[10] ELECTRON-SPIN-RESONANCE AND IR STUDIES ON A-SI1-XGEX-H PREPARED BY GLOW-DISCHARGE DECOMPOSITION
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L833 - L836