THE G-VALUES OF DEFECTS IN AMORPHOUS C, SI AND GE

被引：50

作者：

ISHII, N ^{[1
]}

KUMEDA, M ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] KANAZAWA UNIV,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 09期

关键词：

D O I：

10.1143/JJAP.20.L673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L673 / L676

页数：4

共 11 条

[1]

ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

BRODSKY, MH ;

TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

[2]

ATOMIC SCREENING CONSTANTS FROM SCF FUNCTIONS [J].

CLEMENTI, E ;

RAIMONDI, DL .

JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (11) :2686-&

[3]

HARRISON WA, 1980, ELECTRONIC STRUCTURE, P116

[4]

ELECTRON-SPIN-RESONANCE IN DOPED CVD AMORPHOUS-SILICON FILMS [J].

HASEGAWA, S ;

KASAJIMA, T ;

SHIMIZU, T .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01) :149-156

[5]

MOORE CE, 1949, NBS CIRC, V467

[6]

APPLICATION OF MOLECULAR-ORBITAL METHOD TO CRYSTALLINE SOLIDS - CALCULATION OF ELECTRONIC-ENERGY BANDS OF DIAMOND-TYPE CRYSTALS [J].

NISHIDA, M .

JOURNAL OF CHEMICAL PHYSICS, 1978, 69 (03) :956-962

[7]

Pauling L., 1960, NATURE CHEM BOND

[8]

ELECTRON-SPIN-RESONANCE STUDIES ON SPUTTERED AMORPHOUS SI-C, SI-GE AND GE-C FILMS [J].

SHIMIZU, T ;

KUMEDA, M ;

KIRIYAMA, Y .

SOLID STATE COMMUNICATIONS, 1981, 37 (09) :699-703

[9]

Shimizu T., 1977, Memoirs of the Faculty of Technology, Kanazawa University, V11, P11

[10]

GAUGE INVARIANCE OF G TENSOR [J].

STONE, AJ .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1963, 271 (1344) :424-+

← 1 2 →